• DocumentCode
    2873565
  • Title

    State-of-the-art wide band-gap semiconductors for power electronic devices

  • Author

    Matsunami, Hiroyuki

  • Author_Institution
    Kyoto Univ., Japan
  • fYear
    2004
  • fDate
    26-28 July 2004
  • Firstpage
    21
  • Lastpage
    22
  • Abstract
    In this paper, state-of-the-art wide band-gap semiconductors is described mainly for SiC considering the application for power electronic devices including some of nitride-based devices.
  • Keywords
    power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; nitride-based devices; power electronic devices; wide band-gap semiconductors; Gallium arsenide; Gallium nitride; Photonic band gap; Power electronics; Semiconductor device doping; Semiconductor impurities; Semiconductor materials; Silicon carbide; Substrates; Wide band gap semiconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, 2004. International Meeting for
  • Print_ISBN
    0-7803-8423-7
  • Electronic_ISBN
    0-7803-8424-5
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2004.1566388
  • Filename
    1566388
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2873565