• DocumentCode
    2873890
  • Title

    Composition of selectively grown GaxIn1-xP from high resolution double-crystal x-ray measurement

  • Author

    Chan, Shih-Hsiung ; Sze, Simon M. ; Chang, Chun-Yen

  • Author_Institution
    National Chiao Tung University
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    45754
  • Lastpage
    46850
  • Keywords
    Chemical vapor deposition; Epitaxial growth; Gain measurement; Gallium arsenide; Indium phosphide; Insulation; MOCVD; Plasma temperature; Quantum dots; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771206
  • Filename
    771206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2873890