Robust n⁺/p⁺ dual-gate cmos device fabrication using dopant drive-out technique

Author

Yu, Douglas C H ; Lee, K.H. ; Kornblit, A. ; Fu, C.C. ; Yan, R.H. ; Lin, H.D.

Author_Institution

AT&T Bell Labs

fYear

1994

fDate

1994

Firstpage

38474

Lastpage

38839

Keywords

Annealing; Boron; Etching; Implants; MOS devices; MOSFET circuits; Robustness; Testing; Thermal resistance; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International

Type

DOI

10.1109/EDMS.1994.771212

Filename

771212

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