• DocumentCode
    2874093
  • Title

    Effect on the electrical properties of HfO2 films grown by metal-organic molecular beam epitaxy

  • Author

    Kim, Mvouna-Seok ; Ko, Young-Don ; Moon, Tae-Hyoung ; Jeong, Min-Chang ; Myoung, Jae-min ; Yun, Ilgu

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
  • fYear
    2004
  • fDate
    26-28 July 2004
  • Firstpage
    77
  • Lastpage
    78
  • Abstract
    The characteristics of the HfO2 dielectric layer on the p-type Si substrate by MOMBE process have been investigated. The electrical properties, surface morphology, and relative concentration of HfO2 films could be tuned by O2/Ar ratio.
  • Keywords
    dielectric thin films; elemental semiconductors; hafnium compounds; interface states; molecular beam epitaxial growth; silicon; surface morphology; surface states; HfO2; electrical properties; metal-organic molecular beam epitaxy; surface morphology; Argon; Capacitance-voltage characteristics; Current density; Dielectric constant; Dielectric substrates; Hafnium oxide; Leakage current; Molecular beam epitaxial growth; Surface morphology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, 2004. International Meeting for
  • Print_ISBN
    0-7803-8423-7
  • Electronic_ISBN
    0-7803-8424-5
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2004.1566416
  • Filename
    1566416
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874093