DocumentCode
2876058
Title
New Method of Dispersion Minimization of Si p-n Junction Temperature Sensors
Author
Yatsuk, V.O. ; Basalkevych, O.Ye. ; Yatsuk, Yu.V. ; Sachenko, A.O.
Author_Institution
Lviv Polytech. Nat. Univ., Lviv
fYear
2007
fDate
6-8 Feb. 2007
Firstpage
1
Lastpage
4
Abstract
The mathematical model of a Si p-n junction temperature sensor, in which all physical processes are under consideration, is developed. The method of conversion characteristic dispersion minimization is proposed. It implies the modulation of measuring current with the further estimation of voltage drops on a p-n junction. Conducted mathematical modeling and a digital thermometer experimental device have testified main theoretical assumptions.
Keywords
elemental semiconductors; p-n junctions; silicon; thermometers; Si; digital thermometer; dispersion minimization; mathematical model; silicon p n junction; temperature sensors; Current measurement; Mathematical model; Microelectronics; Minimization methods; P-n junctions; Semiconductivity; Sensor phenomena and characterization; Temperature distribution; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors Applications Symposium, 2007. SAS '07. IEEE
Conference_Location
San Diego, CA
Print_ISBN
1-4244-0678-1
Electronic_ISBN
1-4244-0678-1
Type
conf
DOI
10.1109/SAS.2007.374408
Filename
4248518
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