• DocumentCode
    2876224
  • Title

    A GaAs 1K static RAM using tungsten-silicide gate self alignment technology

  • Author

    Yokoyama, N. ; Ohnishi, T. ; Onodera, H. ; Shinoki, T. ; Shibatomi, A. ; Ishikawa, Hiroshi

  • Author_Institution
    Fujitsu Laboratories, Ltd., Kawasaki, Japan
  • Volume
    XXVI
  • fYear
    1983
  • fDate
    23-25 Feb. 1983
  • Firstpage
    44
  • Lastpage
    45
  • Abstract
    This paper will report on a GaAs 1K static RAM using tungsten silicide gate self-aligned technology and ion implantation. Address access time of 4ns was obtained with power dissipation of 58mW.
  • Keywords
    Annealing; Circuits; FETs; Gallium arsenide; MESFETs; Random access memory; Read-write memory; Silicides; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1983.1156451
  • Filename
    1156451
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2876224