DocumentCode
2877063
Title
Semiconductor layer extraction techniques by SEM
Author
Koh, Jin Won ; Hwang, Gu Teak ; Hyun, Moon Seop ; Yang, Jun-Mo ; Kim, Jeoung Woo
Author_Institution
Nat. Nanofab Center (NNFC), Daejeon, South Korea
fYear
2011
fDate
4-7 July 2011
Firstpage
1
Lastpage
3
Abstract
Because of a limitation of optical microscope resolution, it is difficult to extract layers of semiconductor devices with a gate size smaller than 180 nm. In this study, we have developed sample preparation methods and image stitching processes for layer extraction by an SEM. This technical development makes it possible to analyze layer information for numerous system ICs.
Keywords
image segmentation; integrated circuits; scanning electron microscopy; semiconductor devices; IC; SEM; image stitching processes; sample preparation method; semiconductor device layer extraction; Chemicals; Films; Integrated circuits; Metals; Plasmas; Scanning electron microscopy; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location
Incheon
ISSN
1946-1542
Print_ISBN
978-1-4577-0159-7
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2011.5992731
Filename
5992731
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