Interface analysis of epi-Si(111)/Y2O3/Pr2O3/Si(111) heterostructures

Author

Yang, J. -M ; Kim, J.W. ; Wilke, A. ; Seifarth, O. ; Schroeder, T.

Author_Institution

Nat. Nanofab Center (NNFC), Daejeon, South Korea

fYear

2011

fDate

4-7 July 2011

Firstpage

1

Lastpage

3

Abstract

Strain engineering of thin epitaxial Si thin films on insulating oxide buffers is of special interest to boost charge carrier mobility for SOI technologies. The single crystalline Si(111)/Y₂O₃(111)/Pr₂O₃(111)/Si(111) heterostructure offers, in principle, the opportunity to grow strain-engineered epitaxial Si(111) layers, realizing compressed, fully relaxed, as well as tensile-strained Si films. The interface structures were precisely analyzed at the atomic scale through Cs-corrected STEM/EELS study.

Keywords

carrier mobility; electron energy loss spectra; elemental semiconductors; interface structure; praseodymium compounds; scanning-transmission electron microscopy; semiconductor epitaxial layers; silicon; silicon-on-insulator; yttrium compounds; SOI technology; STEM-EELS analysis; Si-Y₂O₃-Pr₂O₃-Si; charge carrier mobility; epitaxial thin films; heterostructures; insulating oxide buffers; interface analysis; interface structures; strain engineering; tensile-strained films; Atomic layer deposition; Epitaxial growth; Position measurement; Silicon; Silicon on insulator technology; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Conference_Location

Incheon

ISSN

1946-1542

Print_ISBN

978-1-4577-0159-7

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2011.5992761

Filename

5992761