• DocumentCode
    2878162
  • Title

    A 5ns 4K × 1 NMOS static RAM

  • Author

    O´Connor, K. ; Kushner, R.

  • Author_Institution
    AT&T Bell Labs, Allentown, PA, USA
  • Volume
    XXVI
  • fYear
    1983
  • fDate
    23-25 Feb. 1983
  • Firstpage
    104
  • Lastpage
    105
  • Abstract
    A 5ns 400mW 4K×1 NMOS static RAM with a 120μ2six-transistor depletion mode load cell will be described. The device uses boot-strapped word drivers, per column buffers and 0.5 to 0.8μm channel lengths, formed with single level Ta Si/n+ polysilicon.
  • Keywords
    Capacitors; Clamps; Decoding; Driver circuits; Inverters; Lithography; MOS devices; Propagation delay; Pulsed power supplies; Variable structure systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1983.1156564
  • Filename
    1156564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2878162