• DocumentCode
    2878502
  • Title

    Fine line NMOS transresistance amplifiers

  • Author

    Abidi, Abdessalem ; Kasper, B. ; Kushner, R.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    XXVII
  • fYear
    1984
  • fDate
    22-24 Feb. 1984
  • Firstpage
    76
  • Lastpage
    77
  • Abstract
    Two broadband transresistance amplifiers with bandwidths of about 700MHz, using one micron channel length NMOS devices, and incorporating a voltage controllable gain stage and a temperature tracking circuit, will be reported. One amplifier has been used as a front end for a fiber optics system operating at 800Mb/s.
  • Keywords
    Bandwidth; Broadband amplifiers; Circuits; MOS devices; Optical amplifiers; Optical fiber amplifiers; Optical fibers; Semiconductor optical amplifiers; Temperature control; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1984.1156584
  • Filename
    1156584
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2878502