DocumentCode

2878775

Title

Triple poly II DRAM memory cell

Author

Yang, Kun ; Smits, K. ; Haq, E. ; Embrathiry, M. ; Varadi, A.

Author_Institution

National Semicond. Corp., Santa Clara, CA, USA

Volume

XXVII

fYear

1984

fDate

22-24 Feb. 1984

Firstpage

102

Lastpage

103

Keywords

Area measurement; Capacitors; Content addressable storage; Dielectric measurements; Random access memory; Size measurement; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International

Conference_Location

San Francisco, CA, USA

Type

conf

DOI

10.1109/ISSCC.1984.1156601

Filename

1156601