DocumentCode
2879040
Title
Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors
Author
Warburton, Ryan E. ; Pellegrini, Sara ; Tan, Lionel ; Ng, Jo Shien ; Krysa, Andrey ; Groom, Kris ; David, John P R ; Cova, Sergio ; Buller, Gerald S.
Author_Institution
Sch. of Eng. & Phys. Sci., Heriot-Watt Univ., Edinburgh
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550 nm, in terms of dark count rate, single-photon detection efficiency, afterpulsing and photon-timing jitter.
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; jitter; optical design techniques; photodetectors; Geiger-mode operation; InGaAs-InP; dark count rate; photon-timing jitter; single-photon avalanche diode detectors; single-photon detection efficiency; Avalanche photodiodes; Circuit testing; Diodes; Envelope detectors; Fabrication; Geometry; Indium gallium arsenide; Indium phosphide; Temperature; Timing jitter; 040.5160; 040.5570;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628704
Filename
4628704
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