DocumentCode
2879318
Title
The Damage Voltage Calculation of ESD based on Damage Parameters of Square wave
Author
Yong-tao, LIN ; Zhi-liang, Tan ; Li-Gang
Author_Institution
Key Lab. of Defense Sci. And Technol., Ordnance Eng. Coll.
fYear
2006
fDate
1-4 Aug. 2006
Firstpage
293
Lastpage
296
Abstract
In the short pulse region, the knot surface breakdown is the chief damage that was induced by the electromagnetic pulse to the electronic devices. The power that leads the devices damaged relates with the pulse width. Electrostatic discharge (ESD) is a course with high electric potential and instantaneous large current, and ESD breakdown of the electronic devices is quite similar with it. According to the Wunch-Bell´s model theory that appraises pulse width threshold of semiconductor device, combining the human-body model (HBM) of ESD, the theoretical formula calculating damage threshold voltage of ESD was derivated. It provides one kind of method to estimate ESD damage threshold in the condition of lacked experimental data
Keywords
electromagnetic pulse; electrostatic discharge; radiation effects; ESD; Wunch-Bell model; damage voltage calculation; electromagnetic pulse; electronic devices; electrostatic discharge; human-body model; square wave; Curve fitting; EMP radiation effects; Electric breakdown; Electrostatic discharge; Integrated circuit modeling; Laboratories; Power engineering and energy; Semiconductor devices; Space vector pulse width modulation; Threshold voltage; ESD; damage threshold Wunch-Bell model; electromagnetic pulse;
fLanguage
English
Publisher
ieee
Conference_Titel
Environmental Electromagnetics, The 2006 4th Asia-Pacific Conference on
Conference_Location
Dalian
Print_ISBN
1-4244-0183-6
Type
conf
DOI
10.1109/CEEM.2006.257956
Filename
4027288
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