• DocumentCode
    2879318
  • Title

    The Damage Voltage Calculation of ESD based on Damage Parameters of Square wave

  • Author

    Yong-tao, LIN ; Zhi-liang, Tan ; Li-Gang

  • Author_Institution
    Key Lab. of Defense Sci. And Technol., Ordnance Eng. Coll.
  • fYear
    2006
  • fDate
    1-4 Aug. 2006
  • Firstpage
    293
  • Lastpage
    296
  • Abstract
    In the short pulse region, the knot surface breakdown is the chief damage that was induced by the electromagnetic pulse to the electronic devices. The power that leads the devices damaged relates with the pulse width. Electrostatic discharge (ESD) is a course with high electric potential and instantaneous large current, and ESD breakdown of the electronic devices is quite similar with it. According to the Wunch-Bell´s model theory that appraises pulse width threshold of semiconductor device, combining the human-body model (HBM) of ESD, the theoretical formula calculating damage threshold voltage of ESD was derivated. It provides one kind of method to estimate ESD damage threshold in the condition of lacked experimental data
  • Keywords
    electromagnetic pulse; electrostatic discharge; radiation effects; ESD; Wunch-Bell model; damage voltage calculation; electromagnetic pulse; electronic devices; electrostatic discharge; human-body model; square wave; Curve fitting; EMP radiation effects; Electric breakdown; Electrostatic discharge; Integrated circuit modeling; Laboratories; Power engineering and energy; Semiconductor devices; Space vector pulse width modulation; Threshold voltage; ESD; damage threshold Wunch-Bell model; electromagnetic pulse;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Environmental Electromagnetics, The 2006 4th Asia-Pacific Conference on
  • Conference_Location
    Dalian
  • Print_ISBN
    1-4244-0183-6
  • Type

    conf

  • DOI
    10.1109/CEEM.2006.257956
  • Filename
    4027288