• DocumentCode
    2879377
  • Title

    GaAs heterojunction bipolar 1K gate array

  • Author

    Hen Yuan ; McLevige, W. ; Hung Shih ; Hearn, A.

  • Author_Institution
    Texas Instruments Central Res. Labs., Dallas, TX, USA
  • Volume
    XXVII
  • fYear
    1984
  • fDate
    22-24 Feb. 1984
  • Firstpage
    42
  • Lastpage
    43
  • Abstract
    This report will discuss the design, fabrication and performance of a 1K heterojunction I2L gate array with a base bar size of 3.55 × 3.80mm2, containing 1024 internal gates, 64 programmable I/O buffers and 8 pads for the power supply. For general circuit applications the layout provides 300 global wire channels: 150 each in the horizontal and vertical directions.
  • Keywords
    Capacitance; Delay; Gallium arsenide; Heterojunctions; Integrated circuit technology; Isolation technology; Logic arrays; Logic gates; Voltage; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1984.1156638
  • Filename
    1156638
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2879377