• DocumentCode
    2880694
  • Title

    A 256K DRAM with descrambled redundancy test capability

  • Author

    Kantz, Deirdre ; Goetz, J. ; Bender, Ruth ; Baehring, M. ; Wawersig, J. ; Meyer, Wolfgang ; Mueller, Wolfgang

  • Author_Institution
    Siemens AG, Munich, W. Germany
  • Volume
    XXVII
  • fYear
    1984
  • fDate
    22-24 Feb. 1984
  • Firstpage
    272
  • Lastpage
    273
  • Abstract
    This paper will describe a double poly TaSi2-gate 256Kb DRAM with 20ns nibble mode ancl 300mW power dissipation affording automatic descrambled testing.
  • Keywords
    Automatic testing; Circuit testing; Content addressable storage; Decoding; Failure analysis; Laser beams; Laser modes; Quality assurance; Random access memory; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1984.1156710
  • Filename
    1156710
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2880694