• DocumentCode
    2880704
  • Title

    A 46ns 256K CMOS SRAM

  • Author

    Isobe, M. ; Matsunaga, J. ; Sakurai, Takayasu ; Ohtani, T. ; Sawada, Kazuaki ; Nozawa, H. ; Iizuka, Tetsuya ; Kohyama, S.

  • Author_Institution
    Toshiba Semicond. Device Engin. Lab., Kawasaki, Japan
  • Volume
    XXVII
  • fYear
    1984
  • fDate
    22-24 Feb. 1984
  • Firstpage
    214
  • Lastpage
    215
  • Abstract
    A 46ns 32K×8 CMOS RAM fabricated with double metal, double poly 1.2μm P-well technology will be reported. The RAM(59.2mm2) has a 10mW operating power at 1MHz and a 30μW standby power.
  • Keywords
    Artificial intelligence; CMOS memory circuits; CMOS process; Decoding; Detectors; Frequency; Fuses; MOS devices; Random access memory; Read-write memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1984.1156711
  • Filename
    1156711
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2880704