DocumentCode
2881475
Title
Methods and tools for semiconductor annealing and silicon thin film crystallization using solid state lasers
Author
Oesterlin, Peter ; Burghardt, Berthold ; Kahlert, Hans-Juergen ; Heglin, L. Michael
Author_Institution
Innovavent GmbH, Gottingen
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
1
Abstract
For future 65 nm and smaller nodes, thermal anneal processes in the ms and mus range are required. Based on laboratory tests using the line scan method, an R&D system has been developed.
Keywords
annealing; crystallisation; elemental semiconductors; laser materials processing; silicon; solid lasers; thin films; Si; semiconductor annealing; size 65 nm; solid state lasers; thermal anneal processes; thin film crystallization; Annealing; Crystallization; Frequency; Laser beams; Optical pulses; Research and development; Semiconductor lasers; Semiconductor thin films; Silicon; Solid lasers; (140.3300) Laser beam shaping; (140.3390) Laser materials processing; (160.6000) Semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628853
Filename
4628853
Link To Document