Full-wave modeling of sub-millimeter wave diode parasitics

Author

Karisan, Y. ; Sertel, Kubilay

Author_Institution

ElectroScience Lab., Ohio State Univ., Columbus, OH, USA

fYear

2013

fDate

7-13 July 2013

Firstpage

1140

Lastpage

1141

Abstract

Intrinsic carrier dynamics and extrinsic parasitic couplings of zero-bias millimeter-wave and submillimeter-wave diodes are investigated in the context of THz integrated circuits. More specifically, a two-step diode characterization procedure, aimed at improving device performance in the THz band is developed. Intrinsic and extrinsic effects are considered independently to clearly identify the factors impacting high frequency operation. Numerical examples, involving a sub-mmW Schottky barrier diode are presented to illustrate the working mechanism of the proposed characterization technique.

Keywords

Schottky barriers; Schottky diodes; millimetre wave diodes; semiconductor device models; submillimetre wave diodes; THz integrated circuits; extrinsic effects; extrinsic parasitic couplings; full-wave modeling; intrinsic carrier dynamics; intrinsic effects; submillimeter wave diode parasitics; submillimeter-wave diodes; submmW Schottky barrier diode; two-step diode characterization procedure; zero-bias millimeter-wave diodes; Capacitance-voltage characteristics; Equivalent circuits; Gallium arsenide; Integrated circuit modeling; Junctions; Performance evaluation; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium (APSURSI), 2013 IEEE

Conference_Location

Orlando, FL

ISSN

1522-3965

Print_ISBN

978-1-4673-5315-1

Type

conf

DOI

10.1109/APS.2013.6711230

Filename

6711230