DocumentCode
2882581
Title
New Power Transistor and Application Technique for Power Converters
Author
Ichijo, Masami ; Mizutani, Tadao
Author_Institution
Fuji electric Co., Ltd. Tokyo, Japan
fYear
1982
fDate
3-6 Oct. 1982
Firstpage
204
Lastpage
211
Abstract
We have completed the systematization of power transistor devices of 500 V and 1000 V in breakdown voltage, and max. 200 A in current capacity. Since the electrical characteristics and package structure of these power transistors are designed to meet the circuit designers´ requirement sufficiently, they can be applied to large capacity power converters, with compact structure and high performance provided. This paper reports the features of the new power transistors, the technique of application to power converters, and examples of the transistorized power converters.
Keywords
Assembly; Circuits; Electric variables; Employment; Low voltage; Manufacturing; Packaging machines; Power transistors; Semiconductor optical amplifiers; Switching converters;
fLanguage
English
Publisher
ieee
Conference_Titel
Telecommunications Energy Conference, 1982. INTELEC 1982. International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/INTLEC.1982.4793731
Filename
4793731
Link To Document