• DocumentCode
    2883222
  • Title

    Modification of confinement area for efficient electron capture in MQW SCH

  • Author

    Safonov, Ivan M. ; Klimenko, Mikhail V. ; Sukhoivanov, Igor A.

  • fYear
    2005
  • fDate
    12-17 June 2005
  • Firstpage
    32
  • Abstract
    This paper proposes different ways of the capture efficiency increase without in-quantum-well-eigenstates spectrum perturbation based on the analysis which uses an original self-consistent methodology of the potential profile and eigenstates spectrum computing. The carrier capture efficiency for different structures and different optimization methods is computed. Finally, the laws of the semiconductor alloy composition are determined, which provide the lattice-matched separate confinement-area and required potential profiles.
  • Keywords
    eigenvalues and eigenfunctions; electron traps; semiconductor materials; semiconductor quantum wells; MQW SCH; carrier capture efficiency; confinement area modification; efficient electron capture; eigenstates spectrum computing; lattice matching; multiple quantum well separate confinement heterostructure; optimization methods; potential profile; semiconductor alloy composition; separate confinement-area; Carrier confinement; Electrons; Photonics; Potential well; Quantum computing; Quantum well devices; Radioactive decay; Semiconductor materials; Shape; Superlattices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference, 2005. EQEC '05. European
  • Print_ISBN
    0-7803-8973-5
  • Type

    conf

  • DOI
    10.1109/EQEC.2005.1567204
  • Filename
    1567204