DocumentCode
2883222
Title
Modification of confinement area for efficient electron capture in MQW SCH
Author
Safonov, Ivan M. ; Klimenko, Mikhail V. ; Sukhoivanov, Igor A.
fYear
2005
fDate
12-17 June 2005
Firstpage
32
Abstract
This paper proposes different ways of the capture efficiency increase without in-quantum-well-eigenstates spectrum perturbation based on the analysis which uses an original self-consistent methodology of the potential profile and eigenstates spectrum computing. The carrier capture efficiency for different structures and different optimization methods is computed. Finally, the laws of the semiconductor alloy composition are determined, which provide the lattice-matched separate confinement-area and required potential profiles.
Keywords
eigenvalues and eigenfunctions; electron traps; semiconductor materials; semiconductor quantum wells; MQW SCH; carrier capture efficiency; confinement area modification; efficient electron capture; eigenstates spectrum computing; lattice matching; multiple quantum well separate confinement heterostructure; optimization methods; potential profile; semiconductor alloy composition; separate confinement-area; Carrier confinement; Electrons; Photonics; Potential well; Quantum computing; Quantum well devices; Radioactive decay; Semiconductor materials; Shape; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2005. EQEC '05. European
Print_ISBN
0-7803-8973-5
Type
conf
DOI
10.1109/EQEC.2005.1567204
Filename
1567204
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