DocumentCode
2883414
Title
Design and simulation of self-aligned modulation doped AlGaAs/GaAs ICs
Author
Shur, M. ; Tzu-Hung Chen ; Chong Hyun ; Jenkins, Phillip
Author_Institution
University Of Minnesota, Minneapolis, MN, USA
Volume
XXVIII
fYear
1985
fDate
13-15 Feb. 1985
Firstpage
264
Lastpage
265
Abstract
Device design and simulation techniques for optimizing the performance of MODFET ICs will be presented. Self-aligned ion-implanted MODFETs with transconductances up to 249mmhos/mm and ring oscillators with 17.6ps propagation delay have been fabricated.
Keywords
Circuit noise; Circuit simulation; Delay; Driver circuits; Epitaxial layers; Gallium arsenide; HEMTs; Inverters; MODFET circuits; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1985.1156868
Filename
1156868
Link To Document