DocumentCode
2883599
Title
Electronic and optical properties of self-assembled InN/GaN quantum dots
Author
Schumacher, S. ; Baer, N. ; Schulz, S. ; Gartner, P. ; Czycholl, G. ; Jahnke, F.
Author_Institution
Inst. for Theor. Phys., Univ. of Bremen, Bremen
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
Electronic and optical properties of self-assembled InN/GaN quantum dots are investigated using a tight-binding model combined with full-configuration interaction calculations. Multi-exciton spectra are discussed. Dark exciton and biexciton ground-states are found for small quantum dots.
Keywords
III-V semiconductors; excitons; gallium compounds; indium compounds; semiconductor quantum dots; wide band gap semiconductors; InN-GaN; biexciton ground-states; dark exciton; electronic properties; multi-exciton spectra; optical properties; self-assembled quantum dots; tight-binding model; Atom optics; Atomic layer deposition; Charge carrier processes; Excitons; Gallium nitride; Optical microscopy; Quantum dots; Quantum mechanics; Stimulated emission; Visualization; (250.5230) Photoluminescence; (300.6470) Spectroscopy, semiconductors; (999.9999) Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628979
Filename
4628979
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