Intensity spiral patterns in a semiconductor microresonator

This paper shows intensity spiral pattern existence in a semiconductor microresonator with relaxed requirements, namely, both the intensity- and the phase structure of the exciting light field imposed externally, support stable amplitude spiral patterns. In simulations, a phenomenological semiconductor resonator model with spiral initial conditions and a wide Gaussian-shaped input beam is used. In a wide range of wavelengths corresponding to dispersive and absorptive nonlinearities, intensity spirals are found stable, qualitatively similar to the experimental structures.