Measurement of Young´s modulus of nickel silicide film by a surface profiler

Author

Qin, Ming ; Yuen, C.Y. ; Poon, M.C. ; Chan, W.Y.

Author_Institution

Microelectron. Center, Southeast Univ., Nanjing, China

fYear

2000

fDate

2000

Firstpage

64

Lastpage

67

Abstract

Young´s modulus of NiSi film formed on crystal silicon is determined by measuring the deflection of the film as a function of the loaded force on the center of it. In order to reduce the error caused by unknown Poisson´s ratio and the boundary of the structure, Si₃N₄ film with a Young´s modulus of 370 Gpa is used as a reference. The results show that NiSi formed at 350°C has a Young´s modulus of 132 GPa, which is lower than that that of normal grown polysilicon (~160 Gpa) and Si₃N₄. It means that the NiSi is a promising structure material for MEMS application

Keywords

Young´s modulus; elastic moduli measurement; metallic thin films; nickel compounds; 350 C; MEMS structural material; NiSi; Young modulus measurement; beam deflection; crystalline silicon substrate; nickel silicide film; surface profiler; Force measurement; Frequency measurement; Nickel; Pressure measurement; Semiconductor films; Silicides; Silicon; Thickness measurement; Transistors; Vibration measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong

Conference_Location

Hong Kong

Print_ISBN

0-7803-6304-3

Type

conf

DOI

10.1109/HKEDM.2000.904217

Filename

904217