DocumentCode
2883823
Title
Effects of electric and magnetic fields on electrons in a GaAs quantum box
Author
Chakraborty, Haitali ; Lai, P.T.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
fYear
2000
fDate
2000
Firstpage
82
Lastpage
85
Abstract
An attempt is made to investigate theoretically the effect of electric and magnetic fields on an n-GaAs semiconductor quantum box. The magnitude of energy shift due to the electric or magnetic field increases with the field strength. The shift is also more pronounced for larger box dimensions
Keywords
III-V semiconductors; gallium arsenide; semiconductor quantum dots; GaAs; electric field; electron energy level; magnetic field; n-GaAs semiconductor quantum box; Electrons; Energy states; Gallium arsenide; Magnetic confinement; Magnetic fields; Nanofabrication; Perturbation methods; Power engineering and energy; Quantum dots; Quantum mechanics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-6304-3
Type
conf
DOI
10.1109/HKEDM.2000.904221
Filename
904221
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