DocumentCode
2885248
Title
A theoretical approach to study the temperature dependent performance of a SiC MESFET in sensor application.
Author
Dutta, Sutanu
Author_Institution
Department of Electronics, Vidyasagar University, Midnapur-721102, West Bengal, India
fYear
2012
fDate
7-10 March 2012
Firstpage
298
Lastpage
300
Abstract
A temperature dependent theoretical current voltage model of a SiC MESFET is applied to study the performance of the device in sensor application. The linearity performance of the drain current with device temperature is studied for different device parameters like applied biases, gate length and doping concentration. The temperature sensitivity of the device is also calculated for different gate length and doping concentration.
Keywords
MESFET; Silicon Carbide; Temperature Sensor;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Technology of Sensors (ISPTS), 2012 1st International Symposium on
Conference_Location
Pune, India
Print_ISBN
978-1-4673-1040-6
Type
conf
DOI
10.1109/ISPTS.2012.6260952
Filename
6260952
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