The effect of device configuration on GaAs MESFET negative resistance behaviour

Author

Poole, Dr C R

Author_Institution

Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, Hong Kong

fYear

1991

fDate

16-17 Jun 1991

Firstpage

427

Abstract

A new analysis of the effect of device configuration on negative resistance behaviour of a GaAs MESFET with series feedback has been undertaken. The analysis is based on a simplified equivalent circuit representation of the active device, and gives explicit results for the frequency range over which negative resistance behaviour can be expected to occur. It is shown that even with S₁₂=0, the device can produce negative resistance if the correct feedback termination is used. Furthermore, it is shown that capacitive series feedback cannot be used to generate negative resistance in the common gate and common drain configurations

Keywords

III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; feedback; gallium arsenide; negative resistance; solid-state microwave devices; GaAs; GaAs MESFET; device configuration; equivalent circuit; feedback termination; frequency range; inductive series feedback; microwave transistor; negative resistance behaviour; series feedback; Admittance; Cities and towns; Equivalent circuits; Frequency; Gallium arsenide; MESFET circuits; MMICs; Microwave devices; Microwave oscillators; Negative feedback;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991. Conference Proceedings, China., 1991 International Conference on

Conference_Location

Shenzhen

Type

conf

DOI

10.1109/CICCAS.1991.184379

Filename

184379