Diagnosis of trapping phenomena in GaN MESFETs

Author

Meneghesso, G. ; Chini, A. ; Zanoni, E. ; Manfredi, M. ; Pavesi, M. ; Boudart, B. ; Gaquiere, C.

Author_Institution

Dipartimento di Elettronica e Inf., Padova Univ., Italy

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

389

Lastpage

392

Abstract

In this work we present results related to the current/voltage characteristics collapse in GaN MESFETs. Two different failure mechanisms were observed, one of them clearly consists in a positive threshold voltage shift. Traps responsible for the "current collapse" were also characterized by means of different measurement techniques. Phototransient experiments show the presence of a capture barrier of 0.1 eV while by a spectroscopic technique four photoionization energy levels were estimated. Finally, electroluminescence measurements show the presence of visible and UV light, suggesting the presence of a self-recovery mechanisms.

Keywords

Schottky gate field effect transistors; characteristics measurement; electroluminescence; electron traps; failure analysis; fault diagnosis; gallium compounds; hole traps; semiconductor device measurement; semiconductor device testing; transients; 0.1 eV; GaN; GaN MESFET; UV light; capture barrier; current collapse; current/voltage characteristics; electroluminescence measurements; failure mechanisms; failure modes; photoionization energy levels; phototransient experiments; positive threshold voltage shift; sapphire substrate; self-recovery mechanisms; spectroscopic technique; traps; visible light; Electroluminescence; Energy capture; Energy states; Failure analysis; Gallium nitride; Ionization; MESFETs; Measurement techniques; Spectroscopy; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904338

Filename

904338