DocumentCode
2886118
Title
Quantum 1/f noise theory and experiment in QWIPs
Author
Handel, Peter H. ; Troung, Amanda M.
Author_Institution
Dept. of Phys. & Astron., Univ. of Missouri-St. Louis, St. Louis, MO, USA
fYear
2013
fDate
24-28 June 2013
Firstpage
1
Lastpage
4
Abstract
The dark current of Quantum Well Inter-subband Photodetectors is known to be affected by quantum 1/f noise. This limits the detectivity. This paper compares various experimental 1/f noise measurements in QWIPs with the prediction of the conventional quantum 1/f noise expression [1-2] for GaN/AlGaN QWIPs. The elementary process causing the dark current is the transfer of an electron out of one well. This happens under the influence of the applied electric field, and has in general both thermally activated and tunneling components. The larger the applied electric field, the larger is the squared velocity change of the carriers, and the larger is the obtained conventional quantum 1/f effect. The detectivity of the devices is calculated on this basis. The results are compared with measurements of 1/f noise in QWIPs by C. Jelen, and 3 others, and the agreement is good.
Keywords
1/f noise; III-V semiconductors; aluminium compounds; dark conductivity; gallium compounds; noise measurement; photodetectors; quantum noise; quantum well devices; semiconductor device noise; semiconductor quantum wells; wide band gap semiconductors; GaN-AlGaN; GaN/AlGaN QWIP; Quantum Well Inter-subband Photodetectors; applied electric field; dark current; quantum 1/f noise; thermally activated components; tunneling components; velocity change; Dark current; Effective mass; Fluctuations; Indium phosphide; Noise; Photodetectors; Quantum mechanics; 1/f noise; Photodetector dark current; QWIPs; detectivity; quantum 1/f noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location
Montpellier
Print_ISBN
978-1-4799-0668-0
Type
conf
DOI
10.1109/ICNF.2013.6579011
Filename
6579011
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