DocumentCode
2886228
Title
Design and simulation of differential active inductor with 0.18 um CMOS Technology
Author
Rasouli, Komeil ; Nouri, Akram ; Sabaghi, Masoud ; Kordalivand, A.M. ; Far, Mahmoud Azmodeh
Author_Institution
Laser & Opt. Res. Sch., NSTRI, Tehran, Iran
fYear
2011
fDate
27-28 June 2011
Firstpage
23
Lastpage
26
Abstract
In this paper we present differential active inductor in CMOS technology. The supply voltage for this circuit is 1.8V. A self resonant frequency of 5GHz is obtained. The range of sweep for inductance (L) achieved from 1nH up to 70nH. In this design we used 0.18um RFCOMS transistor and Advanced Design system (ADS) for Design and simulation circuits.
Keywords
CMOS integrated circuits; field effect MMIC; inductance; inductors; microwave transistors; CMOS technology; RFCOMS transistor; advanced design system; differential active inductor; frequency 5 GHz; inductance; size 0.18 mum; voltage 1.8 V; Active filters; Active inductors; CMOS integrated circuits; CMOS technology; Resonant frequency; Transistors; ADS; RFCMOS; differential Active Inductor;
fLanguage
English
Publisher
ieee
Conference_Titel
System Engineering and Technology (ICSET), 2011 IEEE International Conference on
Conference_Location
Shah Alam
Print_ISBN
978-1-4577-1256-2
Type
conf
DOI
10.1109/ICSEngT.2011.5993414
Filename
5993414
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