Understanding the Carbon Impact on Si/SiGe:C HBT Base Current Mismatch

Author

Danaie, Stephane ; Marin, Mario ; Ghibaudo, Gerard ; Vildeuil, J.-C. ; Chouteau, S. ; Sicard, Isabelle ; Monroy

Author_Institution

STMicroelectron., Crolles

fYear

2007

fDate

19-22 March 2007

Firstpage

83

Lastpage

86

Abstract

In this paper, we have investigated the impact of the carbon concentration on bipolar transistor matching at medium current region. Original base current matching results, obtained from the characterization of two carbon concentration splits in a SiGe:C BiCMOS technology, are first discussed and well interpreted by a new base current mismatch physical model. Our assumptions are also confirmed by a matching characterization of bipolar transistors subjected to a hot carrier injection (HCI) stress.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; carbon; electric current; heterojunction bipolar transistors; semiconductor device models; silicon; BiCMOS technology; HBT base current mismatch; Si-SiGe:C; base current mismatch physical model; bipolar transistor matching; carbon concentration impact; hot carrier injection stress; medium current region; BiCMOS integrated circuits; Bipolar transistors; Carbon dioxide; Cutoff frequency; Heterojunction bipolar transistors; Hot carrier injection; Human computer interaction; Microelectronics; Stress; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on

Conference_Location

Tokyo

Print_ISBN

1-4244-0781-8

Electronic_ISBN

1-4244-0781-8

Type

conf

DOI

10.1109/ICMTS.2007.374460

Filename

4252410