A Test Structure for Analysis of Asymmetry and Orientation Dependence of MOSFETs

Author

Matsuda, T. ; Sugiyama, Y. ; Nohara, K. ; Morita, K. ; Iwata, H. ; Ohzone, T. ; Morishita, T. ; Komoku, K.

Author_Institution

Toyama Prefectural Univ., Toyama

fYear

2007

fDate

19-22 March 2007

Firstpage

153

Lastpage

156

Abstract

A test structure to analyze asymmetry and orientation dependence of MOSFETs is presented. n-MOSFETs with 8 different channel orientation and three kinds of process conditions were measured and symmetry of I_Dsat and I_Bmax with respect to the interchange of source and drain was examined. Although both I_Dsat and I_Bmax have similar channel orientation dependence, only I_Bmax in interchanged S/D measurements shows asymmetrical characteristics, which can be applied to a sensitive method for device asymmetry detection.

Keywords

MOSFET; semiconductor device measurement; semiconductor device testing; MOSFET; asymmetrical characteristics; channel orientation; device asymmetry detection; interchanged source-drain measurements; test structure; Current measurement; Electric variables; Electrical resistance measurement; Information analysis; Information systems; MOSFET circuits; Microelectronics; Semiconductor device measurement; System testing; Systems engineering and theory; MOSFET; asymmetry; drain current; orientation dependence; substrate current;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on

Conference_Location

Tokyo

Print_ISBN

1-4244-0781-8

Electronic_ISBN

1-4244-0781-8

Type

conf

DOI

10.1109/ICMTS.2007.374473

Filename

4252423