DocumentCode
2887167
Title
Leakage current reduction in CMOS logic circuits
Author
Lin, Heng-Yao ; Lin, Chi-Sheng ; Chiou, Lih-Yih ; Liu, Bin-Da
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Volume
1
fYear
2004
fDate
6-9 Dec. 2004
Firstpage
349
Abstract
In this paper, a novel logic gate design with low leakage is proposed. Traditionally, the subthreshold leakage through a logic gate depends on the applied input vector. In order to reduce leakage power, we stack an extra transistor in the large leakage path. The proposed structure induces low leakage current under all possible inputs. Compared to the conventional CMOS logic circuit design, the simulation results show that the proposed logic circuits not only reduce significant leakage power dissipation, but also keep similar circuit performance as conventional CMOS logic circuits
Keywords
CMOS logic circuits; integrated circuit design; leakage currents; logic gates; transistor circuits; CMOS logic circuits; input vector; leakage current reduction; leakage power reduction; logic gate design; power dissipation; subthreshold leakage; transistor; CMOS logic circuits; CMOS technology; Couplings; Leakage current; Logic gates; MOSFET circuits; Stacking; Subthreshold current; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on
Conference_Location
Tainan
Print_ISBN
0-7803-8660-4
Type
conf
DOI
10.1109/APCCAS.2004.1412767
Filename
1412767
Link To Document