DocumentCode
2887383
Title
Novel high-power superluminescent diodes with wide active channels
Author
Kostin, Yu O. ; Lobintsov, A.A. ; Yakubovich, S.D.
Author_Institution
SUPERLUM DIODES Ltd., Moscow, Russia
fYear
2010
fDate
12-14 Sept. 2010
Firstpage
10
Lastpage
12
Abstract
Two types of superluminescent diodes (SLDs) based on DQW (InGa)As/(GaAl)As/GaAs nanostructures with 25 μm-width multimode active channels emitting at 890 nm and 950nm were studied. They ensure CW optical power of more than 100 mW ex standard 50 μm multimode fiber (MMF).
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; nanophotonics; quantum well devices; superluminescent diodes; CW optical power; InGaAs-GaAlAs-GaAs; high-power superluminescent diodes; multimode active channels; nanostructures; quantum well diodes; size 25 mum; wavelength 890 nm; wavelength 950 nm; Couplings; Gallium arsenide; Laser modes; Optical fiber networks; Optical waveguides; Power generation; Superluminescent diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-6994-9
Type
conf
DOI
10.1109/LFNM.2010.5624174
Filename
5624174
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