DocumentCode
2888548
Title
High-speed sense amplifier for SRAM applications
Author
Hsu, Chun-Lung ; Ho, Mean-Hom
Author_Institution
Dept. of Electr. Eng., National Dong Hwa Univ., Shou-Feng Hualien, Taiwan
Volume
1
fYear
2004
fDate
6-9 Dec. 2004
Firstpage
577
Abstract
A high-speed sense amplifier capable of static random access memory (SRAM) applications has been developed in this work. The proposed sense amplifier can work at 1GHz with voltage as low as 1.8 V. Restated, the proposed sense amplifier can be used in memory units, as a line receiver and as a restoring element for small-swing logic. Simulated results show that the proposed sense amplifier has 50∼87.5 % speed improvement compared to the conventional sense amplifiers.
Keywords
SRAM chips; amplifiers; random-access storage; 1 GHz; 1.8 V; line receiver; memory units; restoring element; sense amplifier; small-swing logic; static random access memory; Acceleration; CMOS technology; Capacitance; Circuit simulation; Delay effects; Differential amplifiers; Logic circuits; Low voltage; Power amplifiers; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on
Print_ISBN
0-7803-8660-4
Type
conf
DOI
10.1109/APCCAS.2004.1412828
Filename
1412828
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