• DocumentCode
    2888641
  • Title

    Ultra-low threshold erbium-implanted microcavity laser on silicon

  • Author

    Kalkman, J. ; Tchebotareva, A. ; Polman, A. ; Kippenberg, T.J. ; Min, B. ; Vahala, K.

  • Author_Institution
    FOM Inst. for AMOLF, Amsterdam, Netherlands
  • fYear
    2005
  • fDate
    12-17 June 2005
  • Firstpage
    353
  • Abstract
    An ultra-low threshold erbium-doped silica microcavity laser operating at 1.5 μm is presented. The toroidally-shaped silica glass microcavity is made on a Si substrate using standard CMOS fabrication technology in combination with a laser reflow process. Light is coupled into the toroidal laser cavity using a tapered optical fiber that is evanescently coupled to a resonator mode. Laser cavity quality factors as high as 4×107 are achieved and single-mode lasing is observed above a launched power threshold of 5 μW.
  • Keywords
    Q-factor; erbium; laser modes; microcavity lasers; optical fabrication; silicon compounds; solid lasers; 1.5 mum; Si; Si substrate; SiO2:Er; erbium-doped silica microcavity laser; evanescent coupling; laser reflow; quality factors; resonator mode; single-mode lasing; standard CMOS fabrication; tapered optical fiber; CMOS process; CMOS technology; Erbium-doped fiber lasers; Glass; Laser modes; Microcavities; Optical coupling; Optical device fabrication; Optical fibers; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference, 2005. EQEC '05. European
  • Print_ISBN
    0-7803-8973-5
  • Type

    conf

  • DOI
    10.1109/EQEC.2005.1567518
  • Filename
    1567518
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2888641