High-Q semiconductor micropillars with embedded quantum dots of enlarged dimensions

Author

Löffler, A. ; Reithmaier, J.P. ; Sek, G. ; Hofmann, C. ; Reitienstein, S. ; Kamp, M. ; Forchel, A.

Author_Institution

Tech. Physik, Wurzburg Univ., Germany

fYear

2005

fDate

12-17 June 2005

Firstpage

361

Abstract

Vertical emitting AlAs/GaAs microcavity pillars with a new type of GaInAs quantum dots within a one λ-cavity have been realised based on high reflectivity distributed Bragg reflectors. High quality factors were achieved due to an improved fabrication technology. The dot dimensions could be enlarged by one order of magnitude using a low strain Ga_0.70In_0.30As nucleation layer. In this paper, micropillars with a maximum quality factor of up to 27700 for a 4 μm wide microcavity was presented.

Keywords

III-V semiconductors; Q-factor; aluminium compounds; distributed Bragg reflectors; gallium arsenide; micro-optics; microcavities; semiconductor quantum dots; AlAs-GaAs; Ga_0.70In_0.30As nucleation layer; GaInAs; GaInAs quantum dots; distributed Bragg reflectors; quality factors; reflectivity; vertical emitting AlAs/GaAs microcavity pillars; Capacitive sensors; Distributed Bragg reflectors; Gallium arsenide; Microcavities; Mirrors; Optical resonators; Q factor; Quantum dots; Scanning electron microscopy; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 2005. EQEC '05. European

Print_ISBN

0-7803-8973-5

Type

conf

DOI

10.1109/EQEC.2005.1567526

Filename

1567526