DocumentCode
2891125
Title
Synthesis and selenization of Cu2 SnSe3 nanocrystals by a novel solution method
Author
Yi-Hao Chen ; Shih-Chang Shei
Author_Institution
Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan
fYear
2015
fDate
4-6 May 2015
Firstpage
1
Lastpage
3
Abstract
In this study, we firstly synthesized ternary Cu2SnSe3 nano ink by novel organic solvent polyetheramine by solvent-thermal reflux method. Cu2SnSe3 thin films were prepared by solvent-thermal reflux method for Cu/Sn ratio in three different ratios of 2/1, 1.8/1, and 1.4/1. Structure, surface morphology, composition, and electrical and optical properties at different process conditions were measured. SEM micrograph also shown that with Cu/Sn ratio increase, surface have many voids, not uniform for grain size and shape due to nonuniform grown second phase. In this experiment we display a nonvacuum based method to fabricate Cu2SnSe3 based device has been made to study copper factor on device performance. Furthermore, the selenization caused volume expansion of the film, and larger grains were consequently obtained in the CZTSe thin film. We proved that our method has great potential for further optoelectronic device due to low cost, high throughput and composition dependent properties.
Keywords
copper compounds; grain size; liquid phase deposition; nanofabrication; nanostructured materials; scanning electron microscopy; semiconductor growth; semiconductor thin films; surface morphology; ternary semiconductors; tin compounds; voids (solid); CZTSe thin film; Cu2SnSe3; SEM micrograph; copper factor; electrical properties; grain size; nanocrystal selenization; nonvacuum based method; novel organic solvent polyetheramine; novel solution method; optical properties; optoelectronic device; solvent-thermal reflux method; structural properties; surface morphology; ternary nanoink synthesis; thin film preparation; volume expansion; Copper; Films; Morphology; Photovoltaic cells; Surface morphology; Tin; X-ray scattering; Cu2 SnSe3 ; nano ink; nonvacuum; polyetheramine;
fLanguage
English
Publisher
ieee
Conference_Titel
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location
Taipei
Type
conf
DOI
10.1109/ISNE.2015.7132042
Filename
7132042
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