Temperature effects on GTO characteristics

Author

Hudgins, J.L. ; Godbold, C.V. ; Portnoy, W.M. ; Mueller, O.M.

Author_Institution

Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA

fYear

1994

fDate

2-6 Oct 1994

Firstpage

1182

Abstract

The turn-off characteristics and forward conduction drop of gate turn-off thyristors (GTOs) are examined over a temperature range of -150 to 125°C. The forward conduction drop and dynamic performance of these GTOs are discussed and compared to the behavior of other types of thyristors, such as SCRs and MOS-controlled thyristors (MCTs). An analytical description of the forward conduction voltage drop is developed. Particular emphasis is on the low-temperature behavior of the GTOs as it relates to high-temperature superconducting (HTS) power electronics applications

Keywords

carrier lifetime; carrier mobility; semiconductor device models; semiconductor device testing; thermal analysis; thyristors; -150 to 125 C; GTO; MCT; MOS-controlled thyristor; SCR; dynamic performance; forward conduction drop; gate turn-off thyristors; high-temperature superconductors; low-temperature behavior; power electronics; temperature effects; temperature range; turn-off characteristics; Anodes; Cryogenics; Diodes; Drives; High temperature superconductors; MOSFETs; Power electronics; Testing; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1994., Conference Record of the 1994 IEEE

Conference_Location

Denver, CO

Print_ISBN

0-7803-1993-1

Type

conf

DOI

10.1109/IAS.1994.377578

Filename

377578