Complex coupled distributed feedback laser monolithically integrated with electroabsorption modulator at 1.3 μm wavelength

Distributed feedback lasers (DFBs) monolithically integrated with electroabsorption modulators (EAMs) are considered as key components for modern optical telecommunication systems due to very high speed operation capability. Investigated devices are grown on n-InP and contain multiple InGaAlAs quantum wells. For the optical and electrical confinement in the DFB and EAM section a 2 μm-wide ridge waveguide structure is etched, incorporating a small trench for electrical isolation between the sections. In the DFB section a 12 nm thick Ni grating is fabricated laterally to the ridge using electron beam lithography and lift-off.