DocumentCode

2898037

Title

A graphical analysis of the I-V characteristics of pnpn devices

Author

Gibbons, J.

Author_Institution

Stanford University, Stanford, CA, USA

Volume

IX

fYear

1966

fDate

9-11 Feb. 1966

Firstpage

54

Lastpage

55

Keywords

Avalanche breakdown; Breakdown voltage; Charge carrier processes; Diodes; Equations; Lead; Space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1966.1157662

Filename

1157662