DocumentCode
2898061
Title
A fast, high-gain silicon photodiode
Author
Ruegg, H.
Author_Institution
Stanford Electronics Labs., Stanford, CA, USA
Volume
IX
fYear
1966
fDate
9-11 Feb. 1966
Firstpage
56
Lastpage
57
Keywords
Breakdown voltage; Capacitance; Charge carrier processes; Frequency response; Ionization; Laboratories; Photodetectors; Photodiodes; Semiconductor diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1966.1157663
Filename
1157663
Link To Document