DocumentCode
2899004
Title
Pixel design and photodiode process technology for image sensor applications
Author
Minkyu Kang ; Hoon Jang ; Sunjae Hwang ; Soeun Park ; Sanghwa Kim ; Hosoon Ko ; Changhun Han ; Joon Hwang
Author_Institution
Dongbu HiTek Co., Ltd., Gamgok, South Korea
fYear
2012
fDate
4-7 Nov. 2012
Firstpage
320
Lastpage
323
Abstract
Image sensor is device that is widely used for many kinds of applications, as well as mobile phone camera and digital Still camera. The pixel scheme and the required key characteristics can vary depending on the application, and it is important to fabricate the optimal photodiode for the best image quality of the sensor. In this paper, we will explain key factors and techniques of fabricating photodiode, and introduce this factors and techniques as they apply to the actual products.
Keywords
CMOS image sensors; cameras; photodetectors; digital still camera; image quality; image sensor; mobile phone camera; photodiode fabrication; pixel scheme; Capacitance; Dynamic range; Logic gates; Metals; Optical filters; Photodiodes; Transistors; image sensor; photodiode; pixel; process technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SoC Design Conference (ISOCC), 2012 International
Conference_Location
Jeju Island
Print_ISBN
978-1-4673-2989-7
Electronic_ISBN
978-1-4673-2988-0
Type
conf
DOI
10.1109/ISOCC.2012.6407105
Filename
6407105
Link To Document