DocumentCode
2899194
Title
Capacitor insulator reliability prediction using three-dimensional test chips for submicron DRAMS
Author
Yugami, J. ; Mine, T. ; Iijima, S. ; Hiraiwa, A.
Author_Institution
Hitachi Ltd., Tokyo Univ., Japan
fYear
1992
fDate
16-19 Mar 1992
Firstpage
1
Lastpage
5
Abstract
Proposes a new method to predict the reliability of capacitors in any three-dimensional structure under any stress conditions, using test chips which have independently controlled three-dimensional structures. This method is a very promising tool for developing high-reliability capacitor insulators on three-dimensional electrodes in submicron dynamic RAMs (DRAMs). This method can be used to quantitatively compare insulator characteristics
Keywords
DRAM chips; capacitors; circuit reliability; capacitor insulators; capacitors; insulator characteristics; reliability; stress conditions; submicron DRAMS; three-dimensional electrodes; three-dimensional test chips; Capacitance; Capacitors; Electric breakdown; Electrodes; Geometry; Insulation; Insulator testing; Semiconductor device measurement; Stress measurement; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on
Conference_Location
San Diego, CA
Print_ISBN
0-7803-0535-3
Type
conf
DOI
10.1109/ICMTS.1992.185924
Filename
185924
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