• DocumentCode
    2899252
  • Title

    A study of deep body implant into the base of Vertical NPN bipolar transistors

  • Author

    Chan Lik Tan ; Siong, Cheng Chin ; Reza, Hussein Mohammad ; Siang, Hwang Chee

  • Author_Institution
    Process Integration Dept, Infineon Technol. (Kulim) Sdn. Bhd., Kulim, Malaysia
  • fYear
    2010
  • fDate
    Nov. 30 2010-Dec. 2 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, we demonstrate the sensitivity of base resistance by different tilt angle of deep body implant into the base of Vertical NPN bipolar transistors. The base resistance in the vertical NPN bipolar transistors shows a strong dependency on the tilt angle of the boron implant from the deep body. We are able to improve the Early voltage (VEA) without degrading the current gain and breakdown voltage of collector and base on an optimal tilt angle of 0 degree.
  • Keywords
    bipolar transistors; boron; semiconductor device breakdown; B; base resistance; base width modulation; boron implant; breakdown voltage; deep body implant; early voltage; vertical NPN bipolar transistors; Analytical models; Bipolar transistors; Implants; Uninterruptible power systems; Base Width Modulation; Early Voltage; channeling; current gain; tilt angle;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Manufacturing Technology Symposium (IEMT), 2010 34th IEEE/CPMT International
  • Conference_Location
    Melaka
  • ISSN
    1089-8190
  • Print_ISBN
    978-1-4244-8825-4
  • Type

    conf

  • DOI
    10.1109/IEMT.2010.5746737
  • Filename
    5746737
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2899252