An ultra broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication system

Author

Miyashita, Makoto ; Maemura, K. ; Yamamoto, K. ; Shimura, T. ; Nogami, M. ; Motoshima, K. ; Kitayama, T. ; Mitsui, Y.

Author_Institution

Mitsubishi Electric Corp., Hyogo, Japan

fYear

1992

fDate

1-3 June 1992

Firstpage

127

Lastpage

130

Abstract

An ultrabroadband GaAs MESFET preamplifier IC was developed for a 10-Gb/s optical communication system. A high transimpedance of 44 dB- Omega has been obtained from DC to 12 GHz. A receiver has also been fabricated by using this preamplifier IC and a photodiode. The receiver operated with an extremely low equivalent input noise current of 12.6 pA/ square root Hz from DC to 7.8 GHz. The circuit design and the high-frequency characteristics of the preamplifier IC and the receiver are described.<>

Keywords

MMIC; Schottky gate field effect transistors; gallium arsenide; optical communication equipment; optical receivers; preamplifiers; wideband amplifiers; 0 to 12 GHz; 0 to 7.8 GHz; 10 Gbit/s; GaAs; MESFET preamplifier IC; equivalent input noise current; high-frequency characteristics; optical communication system; optical receivers; photodiode; ultrabroadband amplifiers; Gallium arsenide; Integrated circuit noise; MESFET integrated circuits; Optical fiber communication; Optical noise; Optical receivers; Photodiodes; Photonic integrated circuits; Preamplifiers; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992

Conference_Location

Albuquerque, NM, USA

Print_ISBN

0-7803-0677-5

Type

conf

DOI

10.1109/MCS.1992.186016

Filename

186016