RTS and 1/f noise in Ge nanowire transistors

Author

Pogany, D. ; Zeiner, C. ; Bychikhin, S. ; Burchhart, T. ; Lugstein, A. ; Vandamme, L.K.J.

Author_Institution

Inst. for Solid State Electron., Vienna Univ. of Technol., Vienna, Austria

fYear

2011

fDate

12-16 June 2011

Firstpage

368

Lastpage

371

Abstract

Random telegraph signal (RTS) and 1/f noise is investigated in Ge nanowire field effect transistors with NiGe Ohmic contacts and a Si/SiO₂ back gate. Dominant, trap-related, two-level or multilevel RTS noise with relative amplitude in the 10-30% range is usually observed at drain currents below I_D=1nA. For higher currents, 1/f noise becomes dominant. With the current increase, the normalized power spectral density (S_I/I_D²) is first independent on ID and then drops as I_D^-1. Considering dominant mobility fluctuations due to scattering on surface defects a Hooge parameter of 4×10^-3 has been estimated.

Keywords

1/f noise; elemental semiconductors; field effect transistors; germanium; nanowires; nickel compounds; ohmic contacts; silicon; silicon compounds; 1-f noise; Hooge parameter; NiGe; RTS; Si-SiO₂; dominant mobility fluctuations; multilevel RTS noise; nanowire field effect transistors; normalized power spectral density; ohmic contacts; random telegraph signal; surface defect scattering; Charge carrier processes; Current measurement; FETs; Fluctuations; Logic gates; Noise; Silicon; 1/ƒ noise; Ge nanowire; Hooge parameter; RTS noise; field effect transistor; low-frequency noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Conference_Location

Toronto, ON

Print_ISBN

978-1-4577-0189-4

Type

conf

DOI

10.1109/ICNF.2011.5994345

Filename

5994345