InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55 μm

Author

Ok, Seong Hae ; Byun, Young Tae ; Son, Chang Wan ; Moon, Yon Tae ; Choi, Young Wan ; Oh, Jae Eung ; Lee, Seungho ; Jhon, Young Min ; Woo, Deok Ha ; Lee, Seok ; Kim, Sun Ho

Author_Institution

Photonics Res. Centre, Korea Inst. of Sci. & Technol., Seoul, South Korea

fYear

2005

fDate

12-17 June 2005

Firstpage

502

Abstract

The III-V bulk and multiple quantum well (MQW) semiconductor electrooptic (EO) modulators have been successfully demonstrated with high modulation bandwidths. However, one of the drawbacks is a high switching voltage. This is mainly due to small EO coefficients of III-V semiconductor materials. Quantum dot (QD) devices have been predicted to be superior to bulk or MQW devices in optical nonlinearities and enhanced EO effects.

Keywords

III-V semiconductors; Mach-Zehnder interferometers; electro-optical effects; electro-optical modulation; gallium arsenide; indium compounds; nonlinear optics; semiconductor quantum dots; semiconductor quantum wells; III-V semiconductor material; InAs-InGaAs; electrooptic coefficient; electrooptic modulator; modulation bandwidth; multiple quantum well device; optical nonlinearity; quantum dot device; semiconductor quantum well; Bandwidth; Electrooptic modulators; III-V semiconductor materials; Indium gallium arsenide; Optical devices; Optical modulation; Quantum dots; Quantum well devices; Semiconductor materials; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on

Print_ISBN

0-7803-8974-3

Type

conf

DOI

10.1109/CLEOE.2005.1568280

Filename

1568280