Integration of high quality top-gated graphene field effect devices on 150 mm substrate

Recent success of inexpensive and high-throughput chemical vapor deposition (CVD) growth of graphene on Ni or Cu substrates has shown promises for potential industrial applications such as transparent electrodes and field effect transistors (FET). However, high-coverage uniform growth of monolayer graphene on a wafer scale is still a major obstruction, which impedes high yield integration of high performance field effect devices. In this paper, the authors report the first demonstration of high quality top-gated graphene field effect devices on 150 mm substrates exploiting unprecedented homogeneous CVD growth of monolayer graphene.