• DocumentCode
    2901951
  • Title

    Graphene quantum capacitance varactors for wireless sensing applications

  • Author

    Koester, S.J.

  • Author_Institution
    Univ. of Minnesota-Twin Cities, Minneapolis, MN, USA
  • fYear
    2011
  • fDate
    20-22 June 2011
  • Firstpage
    43
  • Lastpage
    44
  • Abstract
    The low density of states in graphene makes it possible for the quantum capacitance to be of the same order of magnitude as the oxide capacitance for experimentally achievable gate dielectric thicknesses [1]. This property, combined with the fact that the density of states varies as a function of energy, means that the capacitance in a metal-oxide-graphene capacitor can be tuned by varying the carrier concentration [2]. The very high mobility and zero band gap in graphene also allow it to remain conductive throughout the entire tuning range, making graphene an idea material to realize a high quality factor (Q) variable capacitor (varactor). If combined with an on-chip inductor to form an LC oscillator circuit, graphene varactors could enable a new class of ultra-compact sensors with wireless readout capability. Compared to MEMS-based varactors, the extremely-large capacitance per unit area of graphene varactors should allow orders-of-magnitude improvement in scalability, a vital feature for numerous applications including in vivo sensing where small size is critical. In this abstract, the device concept is described and simulated performance projections are provided. The main findings in this study are that wide frequency tuning ratios (>; 50%) and high Q (>; 40 at 1 GHz) are possible using realistic assumptions for the graphene properties, device dimensions and parasitic resistances.
  • Keywords
    MOS capacitors; graphene; varactors; wireless sensor networks; C; LC oscillator circuit graphene varactor; MEMS-based varactor; experimental achievable gate dielectric thicknesses; frequency 1 GHz; graphene quantum capacitance varactor; high Q factor variable capacitor; high mobility band gap; high quality factor variable capacitor; metal-oxide-graphene capacitor; on-chip inductor; order-of-magnitude improvement; oxide capacitance; parasitic resistance; quantum capacitance; ultracompact sensor; vivo sensing; wireless readout capability; wireless sensing application; zero band gap; Logic gates; Q factor; Quantum capacitance; Sensors; Tuning; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2011 69th Annual
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-61284-243-1
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2011.5994413
  • Filename
    5994413