DocumentCode
2901951
Title
Graphene quantum capacitance varactors for wireless sensing applications
Author
Koester, S.J.
Author_Institution
Univ. of Minnesota-Twin Cities, Minneapolis, MN, USA
fYear
2011
fDate
20-22 June 2011
Firstpage
43
Lastpage
44
Abstract
The low density of states in graphene makes it possible for the quantum capacitance to be of the same order of magnitude as the oxide capacitance for experimentally achievable gate dielectric thicknesses [1]. This property, combined with the fact that the density of states varies as a function of energy, means that the capacitance in a metal-oxide-graphene capacitor can be tuned by varying the carrier concentration [2]. The very high mobility and zero band gap in graphene also allow it to remain conductive throughout the entire tuning range, making graphene an idea material to realize a high quality factor (Q) variable capacitor (varactor). If combined with an on-chip inductor to form an LC oscillator circuit, graphene varactors could enable a new class of ultra-compact sensors with wireless readout capability. Compared to MEMS-based varactors, the extremely-large capacitance per unit area of graphene varactors should allow orders-of-magnitude improvement in scalability, a vital feature for numerous applications including in vivo sensing where small size is critical. In this abstract, the device concept is described and simulated performance projections are provided. The main findings in this study are that wide frequency tuning ratios (>; 50%) and high Q (>; 40 at 1 GHz) are possible using realistic assumptions for the graphene properties, device dimensions and parasitic resistances.
Keywords
MOS capacitors; graphene; varactors; wireless sensor networks; C; LC oscillator circuit graphene varactor; MEMS-based varactor; experimental achievable gate dielectric thicknesses; frequency 1 GHz; graphene quantum capacitance varactor; high Q factor variable capacitor; high mobility band gap; high quality factor variable capacitor; metal-oxide-graphene capacitor; on-chip inductor; order-of-magnitude improvement; oxide capacitance; parasitic resistance; quantum capacitance; ultracompact sensor; vivo sensing; wireless readout capability; wireless sensing application; zero band gap; Logic gates; Q factor; Quantum capacitance; Sensors; Tuning; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2011 69th Annual
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-61284-243-1
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2011.5994413
Filename
5994413
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